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| i nchange semiconductor isc product specification isc w ebsite www.iscsemi.cn isc& iscsemi is registered trademark 1 isc silicon npn transistor 2 s c 945 description high voltage excellent h fe linearity applications dsigned for use in driver stage of af amplifier and low speed switching a bsolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector - b ase v oltage 60 v v ceo collector - e mitter v oltage 50 v v ebo emitter - b ase v oltage 5 v i c collector c urrent - continuous 100 m a i b base c urrent - continuous 20 m a p c collector p ower d issipat i on @ t c =25 250 m w t j junction temperature 1 25 t stg storage temperature range - 5 5~ 1 25
i nchange semiconductor isc pr oduct specification isc w ebsite www.iscsemi.cn isc&iscsemi is registered trademark 2 isc silicon npn transistor 2s c 945 electrical characteristics t c =25 v ce ( sat ) collector - e mitter saturation v oltage i c = 10 0m a ; i b = 10 ma 0.15 0 .3 v v b e ( sat ) base - e mitter saturation v oltage i c = 100m a ; i b = 10 m a 0.86 1.0 v v be base - e mitter v oltage i c = 1.0m a ; v ce = 6 v 0.55 0.65 v i c b o collector c utoff c urrent v c b = 60 v ; i e = 0 0.1 a i e bo emitter c utoff c urrent v eb = 5 v ; i c = 0 0.1 a h fe 1 dc c urrent g ain i c = 0.1 m a ; v ce = 6 v 50 185 h fe 2 dc c urrent g ain i c = 1.0m a ; v ce = 6 v 90 200 600 f t current - gain bandwidth product i c = 1 0 m a; v ce = 6 v ; 150 250 450 mh z cob collector - base cap acitance v cb =6v; i e =0; f=1.0mhz 3 4 pf nf noise figure i c = 0.1m a ; v ce = 6 v ,f=1khz ; r g =2k 0.8 15 db ? h fe 2 classifications r o p k 90 - 180 135 - 270 200 - 400 300 - 600 |
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